Abstract
The electrochemical behavior of p-type GaAs electrodes in liquid ammonia, in the dark and under illumination, has been investigated. Results show that it is possible to photogenerate solvated electrons (e/sub s//sup -/) from the semiconductor at an underpotential of about 0.9 V compared to Pt, indicating an extremely negative flatband potential for p-GaAs in NH/sub 3/ compared to that found in other solvent systems. The dark collection (oxidation) of solvated electrons appears to occur via surface states at energies in the gap region. A regenerative photovoltaic cell based on the system p-GaAs/NH/sub 3/, e/sub s//sup -//Pt is also described. 7 figures, 1 table.
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