Abstract
In this paper a method for the investigation of the fast SiSiO2 interface states by spectral distribution of photocapacity of the MOS system at low temperatures is presented. The method is based on the photostimulated emission of carriers from the surface into the bulk. Associated change of MOS capacity due to summing up of the charge at surface makes this method more sensitive than other optical methods. The typical photocapacity transient is discussed. For illustration, the spectral distribution of the initial rate of total capacity change is shown for the n-type MOS-C.It is suggested that the observed effects are due to photostimulated transitions from single-level states or a narrow band lying at about 0·4 eV below the conduction band edge. The lack of effects which can be attributed to the transitions from continuously distributed surface states suggests that previously observed surface states could be trapping centres located in the oxide at or near the SiSiO2 interface.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
