Abstract
The best methods of approximating to the ideal counter assumed in Part I are discussed with particular reference to electrode systems. The construction of silicon counters to operate at 78 °K is then described, followed by performance data for α-particles, β-particles, protons and γ-rays. The best resolutions defined as the standard deviation divided by the mean signal are 2.6% for 30 MeV protons, 5.2% for 620 kev β-particles and 5.8% for 1 MeV γ-rays, which, when compared with the predictions of Part I, lead us to believe that short range inhomogeneities in our counter material make the greatest contribution to line broadening. The measurements described enable direct determinations of carrier drift lengths in silicon and of the field dependence of mobility for `hot' electrons to be made. They also provide information about the results of heat treatment of high resistivity silicon.
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