Abstract
CuV2O6 and Cu2V2O7 are low-mobility n-type semiconductors; at room temperature [Formula: see text]. From photoelectron-chemical measurements optical interband transitions are found at 2.02 and 3.15 eV for indium-doped CuV2O6, and at 1.87 and 2.88 eV for Cu2V2O7. In both materials the valence band edge is 6.9 eV below the vacuum level; a qualitative analysis of all data indicates that the upper valence band is made up mainly of oxygen-2p wave functions, as in V2O5.
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