Semiconductive Nb-doped BaTiO 3 films grown by pulsed injection metalorganic chemical vapor deposition

Abstract

Semiconductive Nb-doped BaTiO 3 thin films were grown in situ by pulsed liquid-injection metalorganic chemical vapor deposition on (0 1 2) LaAlO 3 substrates. The films were epitaxially grown, althougth the quality decreased with increasing Nb content. The resistivity was strongly reduced after post-deposition annealing under argon. The room-temperature resistivity reached a minimum of 3 Ω cm for films with ∼2.4 at% Nb content (as measured by EDS). The semiconductive behavior was measured from room temperature up to 470 K and no positive temperature coefficient effect was observed.