Abstract
Short-channel field-effect transistors (FETs) prepared from semiconducting single-walled carbon nanotube (s-SWNT) dispersions sorted with poly(2,5-dimethylidynenitrilo-3,4-didodecylthienylene) are demonstrated. Electrical analysis of the FETs shows no evidence of metallic tubes out of a total number of 646 SWNTs tested, implying an estimated purity of our semiconducting SWNT solution higher than 99.85%. These findings confirm the effectiveness of the polymer-wrapping technique in selecting semiconducting SWNTs, as well as the potential of sorted nanotubes for the fabrication of short channel FETs comprising from 1 to up to 15 nanotubes without inter-nanotube junctions.
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