Abstract
AbstractBy means of ab initio calculations we show that some semiconducting silicides (namely Ca2Si, BaSi2, CrSi2, Mn4Si7, ReSi1.75, β‐FeSi2, OsSi2, Os2Si3 and Ir3Si5) are characterized by significant values of the absorption coefficient near the absorption edge even though they are mainly indirect band‐gap semiconductors. These values are substantially larger that the ones of silicon independently of the band gaps of these semiconducting silicides indicting their prospects for efficient light detectors being fabricated within conventional silicon technology. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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