Abstract

It is shown that a wide band-gap crystal, appropriately doped, can exhibit semiconducting properties. When a dc voltage was applied to a lithium-doped MgO single crystal containing [Li${]}^{0}$ centers, negative differential resistance, self-excited current oscillations, and filament-driven current were observed. The conductivity increase and the nonlinear behavior of the I-V characteristics are described by an impact ionization mechanism. Avalanche breakdown can be produced with low electric fields at moderate temperatures (\ensuremath{\sim}373 K), which eventually leads to electrical breakdown. We postulate that filamentary semiconducting inclusions imbedded in the insulator matrix are responsible for the electrical degradation.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.