Abstract
Thin films of β-FeSi2 on Si(111) have been studied by low energy electron diffraction (LEED) and high resolution electron energy loss spectroscopy (HREELS). The observed LEED pattern is consistent with two possible epitaxial orientations. HREELS measurements demonstrate the semiconducting character of the films. The energy gap is determined to Eg≂0.92 eV–0.33 meV/K T(K). Additionally a number of optical phonons is found in the range between 200 and 500 cm−1. Theoretical spectra are calculated with optical phonon parameters obtained from infrared data and are compared with the measured spectra.
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