Semiconducting graphite oxide films for large scale carbon based electronics

Abstract

Single sheet graphite oxide films are synthesized by intercalation and exfoliation routes of graphite. Those insulating graphite oxide films were deposited on SiO2/Si substrates and reduced to semiconducting graphene. Field effect transistors of these graphite oxide and graphene films were fabricated. The transport properties of the devices were studied before and after the reduction reaction. Such method opens up the possibility of preparing high quality, large area and manufacturable graphene films with low cost.