Abstract
Based on material parameters of diamond and typical experimental data of inverse temperature dependence of electrical conductivity, the temperature coefficient of the resistance of a semiconducting diamond, has been calculated and combined with classic NTC, and platinum thermistors. The results indicate that a boron-doped diamond is postulated to be used as a thin-film NTC high-temperature thermistor. The use of diamond for thermistors extend the operating speed and temperatures because of inherent material advantages.
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