Abstract
A graphene transistor was simply fabricated by employing ZnO deposition into metallic graphene, for which a source-drain electrode and a semiconductor channel could be formed concurrently. The electric properties of graphene could be adjusted by using ZnO thin film because oxygen was injected into the surface of metallic graphene. The surface oxidation of metallic graphene results in enhanced p-type semiconductor characteristics, especially in an improved on/off current ratio. The degree of the self-imposed semiconducting property is proportional to the degree of oxidation occurring on the graphene surface.
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