Abstract
Donor-doped BaTiO3 ceramics were prepared by adding PbO B2O3 SiO2 as a sintering aid. Semiconducting BaTiO3 was obtained at a sintering temperature of 1100 °C. The sintered samples exhibit the Positive Temperature Coefficient of Resistivity (PTCR) effect, which depends on the amount of liquid phase, the concentration of the donor-dopant, and the sintering temperature. The cold resistivity of the samples decreases when the sintering temperature increases. The increase of the grain boundary resistivity and hence of the cold resistivity at lower sintering temperatures was explained by applying the diffusion grain boundary layer model.
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