Abstract
Zn 1 − x Mn x O diluted magnetic semiconductor single phase thin films have been grown by the MOCVD technique. Depositions have been done on fused silica and (0001)-sapphire substrates. Layers on silica are polycrystalline with [001] preferential orientation, while Zn1−xMnxO films on c-sapphire are highly (0001) textured. Manganese content (x) in the samples varies in 0.00–0.44 range. Change of c lattice parameter follows Vegard’s law. Hall effect measurements show a decrease of mobility with Mn increase and no change of carrier concentration. Optical transmission results present the increase of band gap with manganese incorporation. Superconducting quantum interference device magnetometry shows Curie–Weiss behaviors of the susceptibility with antiferromagnetic coupling with an effective exchange constant of J1∕kB=−16K.
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