Abstract
New semi-abrasive free slurry for copper chemical mechanical planarization (CMP) was investigated through the addition of below 0.5 wt% acid colloidal silica, hydrogen peroxide and other additives. The additives as stabilizers for hydrogen peroxide as well as accelerators in tantalum nitride CMP were also evaluated. This semi-abrasive free slurry provides good hydrogen peroxide stability, excellent colloidal silica dispersion ability and easiness of post-CMP cleaning. The extent of enhancement in tantalum nitride CMP was verified through an electrochemical test. This approach may be useful for the application of single and first step copper CMP slurry with one package system.
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