Abstract
Abstract Vertical organic light-emitting transistor (VOLET) having an organic light-emitting diode integrated with a vertical thin-film transistor is promising for transparent electronics because the vertical device structure potentially offers a display with a large aperture ratio and a low power consumption. However, making a transparent VOLET has been challenging due to the requirements for all transparent electrodes including fabrication of a porous source electrode for current modulation in the device. Here, we report a semi-transparent VOLET with a large modulation of light emitted through the top and bottom electrodes using a nano-porous indium-tin oxide (ITO) source electrode, a Mg:Ag drain electrode, and an ITO gate electrode. The porous ITO source electrode is not only important for luminance modulation, but the nano-textured film morphology also enhances light extraction from the device. Finally, we show that the off current of the VOLET can be suppressed with an electron transporting layer (C60), leading to a large luminance on/off ratio of 104.
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