Abstract
The article reports the growth of semi-polar GaN(11-22) layers using epitaxy from metal organic compounds on a nanostructured NP-Si(113) substrate. It was shown that upon the emergence of an island layer, elastic deformed structures of GaN(11-22)/NP-Si(113) form a nano-meter compliant silicon layer on a substrate while elastic stresses conditioned by the difference of temperature coefficients of GaN and Si in such a structure decrease
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