Abstract
The evolution of defect structure and self-compensation is theoretically studied within quasichemical formalism in undoped and donor-doped Te-saturated CdTe during the cooling in the temperature interval 700/spl deg/C-100/spl deg/C. We show, that proper thermal treatment, including low temperature (cca 200/spl deg/C) dwell, allows to prepare semi-insulating CdTe with deep level doping below the limit 10/sup 13/ cm/sup -3/, which is demanded in detector industry. New high-temperature transport data are used to refine on previous native defect properties for the modeling. Variant defect models are analyzed. Diffusion rates at lowered temperature are annotated to approve the model for real-time experimental verification.
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