Abstract
Selective regrowth of indium phosphide (InP) using organometallic vapor phase epitaxy (OMVPE) on a circular shaped mesa has been demonstrated for the first time. Inclusion of an interfacial layer of indium gallium arsenide phosphide between the circular dielectric mask and the underlying material produces a favorable smooth mesa profile by controlling the level of undercut during mesa etching. This combination of profile and undercut was found to be critical for successful selective regrowth and planarization. To the best of our knowledge, this is the first time that a surface light emitting diode has been demonstrated with a selective OMVPE semi-insulating regrowth. The semi-insulating InP layer reduces parasitic capacitance and improves the heat dissipation out of the device. These salient features make these devices suitable for high speed digital and analog communication applications.
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