Abstract
The growth of SIPOS layers is analysed in terms of a model where there is competitive absorption on active sites. Such a model accounts for the fall in growth rate with increasing N 2O content of the input gases. In addition, though, there is the variation in growth rate radially across a wafer to be explained. This radial variation is shown not to be due to mass or thermal transfer limitations. It is suggested that the variation is instead associated with the generation of a homogeneous silicon based intermediate on a heterogeneous oxygen containing site. Evidence for such a process is given by an analysis of the variation in disilane concentration with reactor parameters. Good quantitative agreement between theory and experiment is found for the overall reaction scheme presented.
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