Abstract
The increasing demand for GaAs in the production of monolithic microwave circuits and fast digital logic IC's has led to the rapid development of technological processes for preparing semi-insulating large-area substrates for use in direct implantation. Semi-insulating gallium arsenide can be prepared at present from undoped melts, without conventional Cr doping when the formation of a suitable 0.82 eV electron trap (EL2) concentration is permitted. The origin of the EL2 deep level, thought to be due to impurities (oxygen), has been recently attributed to native structural defects and was found to be closely dependent upon the crystal growth process. In this paper the present state of the technology for SI GaAs single crystal preparation is reviewed and emphasis is placed upon the main factors (melt stoichiometry, oxygen, shallow donor and acceptor impurity) which influence the EL2 deep level concentration.
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