Abstract
AbstractRecently, it was found that semi-insulating behavior of undoped InP can be realized by high pressure annealing of undoped high purity InP. In the present work, studies related with the achievement of the semi-insulating state are reviewed. Purification of raw materials, effect of native defects, effect of high pressure annealing, contamination of Fe are discussed. The semi-insulation mechanism is explained by the Shockley diagram. The semi-insulating state is supposed to be achieved by the annihilation of shallow donors (presumably phosphorus vacancies) and the compensation of the residual donors with a small amount of Fe deep acceptor.
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