Abstract
Semi-insulating 6H–SiC crystals have been achieved by using controlled doping with deep-level vanadium impurities. High resistivity undoped and semi-insulating vanadium-doped single-crystals with diameters up to 50 mm were grown by physical vapor transport using an induction-heated, cold-wall system in which high purity graphite materials constituted the hot zone of the furnace. Undoped crystals were p-type due to the presence of residual acceptor impurities, mainly boron, and exhibited resistivities ranging up to 3000 Ω cm. The semi-insulating behavior of the vanadium-doped crystals is attributed to compensation of residual acceptors by the deep-level vanadium V4+(3d1) donor located near the middle of the band gap.
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