Abstract
In this brief, we present a semi-empirical RC -circuit-based compact model for non-filamentary bi-layer oxide-based random access memory (OxRAM) devices. The proposed RC model captures both dc and pulse behaviors of the OxRAM devices. Additionally, the model is also able to reproduce the electrical behavior of these devices on application of arbitrary SET/RESET pulses. The model is verified for three non-filamentary OxRAM devices: Ta/HfO2/Al:TiO2/TiN, TiN/TaO/HfO x /TiON/TiN, and Al/AlO $_{\sigma }$ /Ta2O5− x /TaO y /W. Through this model, simulation versus experimental error of less than 10% is achieved.
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