Abstract
Ni and Ni(Pt) silicides have been used as a crucial part of ultra-high speed CMOS technologies. Nisi has many advantages to be a suitable candidate to self-align contact for ULSI devices. The Ni(Pt) silicide present all good NiSi characteristics and also the improved thermal stability. This paper investigates the agglomeration formation on Ni and Ni(Pt) silicides thin films and its material compositions. The samples were characterized by Scanning Electron Microscopy (SEM) with an Energy Dispersive Spectroscopy (EDS). NiSi exhibited high surface precipitate formation around 600ºC, and Ni(Pt)Si low precipitate formations up to 820ºC and film degradations at annealing temperatures around 900ºC. EDS analysis revealed the composition of the agglomerations of NiSi films as consisted of Si and Ni, being the Si the major constitutive element of the agglomerates in 600{degree sign}C films and Ni of the agglomerates in 820{degree si gn}C films. The agglomerations of Ni(Pt)Si films formed at 900ºC are consisted of Si, Ni and Pt, with Si and Ni(Pt) in large quantities characterizing the agglomerations as Ni(Pt) silicide. Moreover, EDS spectra taken in the region out of agglomerations show a very high quantities of Si against a low quantities of Ni and Pt, indicating high degradation of the film with less Ni(Pt) silicide layer on Si.
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