Abstract
InP capping layers have been grown on ErP/InP(0 0 1), ErP/InP(1 1 1) A, and ErP/InP(1 1 1) B heterostructures by organometallic vapor phase epitaxy. Morphological change of the InP capping layers has been investigated by scanning electron microscope and atomic force microscope. Coverage of the capping layers on ErP/InP(0 0 1) and ErP/InP(1 1 1) B particularly depends strongly on capping growth temperature. The use of the optimum growth temperature for InP buffer layers results in island growth of InP. By decreasing the growth temperature, the islands connect each other and become a complete layer. On the other hand, morphology of the capping layer on ErP/InP(1 1 1) A shows limited improvement with the decrease in growth temperature. Twin defect exists in the capping layer as well as the buffer layer on InP(1 1 1) A.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
