SEM Measurements of the Dimensions of Relief Structures in the Technological Process of Manufacturing Microcircuits

Abstract

The problems of measuring the dimensions of relief elements on a scanning electron microscope (SEM) in the technological process of manufacturing microcircuits are considered. The first problem is related to the fact that the increase in the SEM during operation can vary over a wide range depending on the measured dimensions. The second problem is that the probe diameter determined in the SEM calibration process differs from the diameter used in operational measurements. The third problem is related to the fact that it is not known which relief parameter is measured in the SEM probe defocusing method. It is shown that to solve the first problem, it is necessary to calibrate the mark on the image using structures with a trapezoidal profile and large angles of inclination of the side walls. The solution of the second problem is based on the method of defocusing the SEM probe: determining the dependence of the sizes between certain points on the SEM signals on the probe diameter and extrapolating this dependence to the zero value of the diameter. The third problem is solved with the help of a virtual scanning electron microscope.