Abstract
SUMMARYSi‐doped GaAs slices after Zn diffusion exhibited a marked decrease in luminous efficiency and a large increase in p‐n junction depth when the initial carrier concentration due to the Si was > 3·5 times 1024 m−3. SEM studies using the CL and EBIC methods, and TEM examinations using plan‐view and cross‐section specimens, showed that these behaviours were associated with high densities of structural defects, interpreted as Zn precipitation. Reasons for these behaviours in terms of nucleation behaviour and diffusion mechanisms are suggested.
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