Abstract
Abstract Distribution of impurities on heat-treated GaAs substrates and layers has been investigated by SEM in conjunction with EMPA analysis. The layers were grown by MBE on both undoped and chromium doped semi-insulating substrates. Comparisons of the electron micrographs and the corresponding EMPA spectra suggest that heating causes the impurities, namely Si, Fe and Cr, to diffuse out from the substrate and redistribute themselves on the layer surface resulting in characteristic defect patterns. No effects due to arsenic over-pressure and/or presence of carbon in the growth environment were apparent, as suggested by previous studies.
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