Abstract
In the advancement of the Internet of Things (IoT) applications, widespread uses and applications of devices require higher frequency connectivity to be explored and exploited. Furthermore, the size, weight, power and cost demands for the IoT ecosystems also creates a new paradigm for the hardware where improved power efficiency and efficient wireless transmission needed to be investigated and made feasible. As such, functional microwave detectors to detect and rectify the signals transmitted in higher frequency regions are crucial. This paper reviewed the practicability of self switching diodes as Radio Frequency (RF) rectifiers. The existing methods used in the evaluation of the rectification performance and cut-off frequency are reviewed, and current achievements are then concluded. The works reviewed in this paper highlights the functionality of SSD as a RF rectifier with design simplicity, which may offer cheaper alternatives in current high frequency rectifying devices for application in low-power devices.
Highlights
INTRODUCTIONAdvances in the innovation and development of the semiconductor industry following the Moore’s law classical scaling [1] had allowed the industry to double the processing power every 18 months until the last decade, where it is impossible to continually increase both frequency and doubled the transistor number in a chip because of the fundamental thermal limit in the ICs
Advances in the innovation and development of the semiconductor industry following the Moore’s law classical scaling [1] had allowed the industry to double the processing power every 18 months until the last decade, where it is impossible to continually increase both frequency and doubled the transistor number in a chip because of the fundamental thermal limit in the ICs. This has started the second More than Moore’s era with equivalent scaling [2]. The approaches of this era which introduced the usage of strained silicon, high-κ/metal gate, FinFET, and other semiconductor material (e.g. Germanium) had increased the performance of transistors and the non-digital functionalities e.g. radio frequency (RF) communication, power control and passive components [3] which bring us to the onset of the internet technologies era by the theme of Internet of Things (IoT)
The size, weight, power and cost (SWaP-C) demands for the IoT ecosystems creates a new paradigm for the hardware where smart power management, improved power efficiency, wireless power transmission and energy harvesting needed to be investigated and made feasible for IoT applications [7].One of the solutions for mobile, rechargeable device is by wireless power transfer (WPT) by harvesting ambient
Summary
Advances in the innovation and development of the semiconductor industry following the Moore’s law classical scaling [1] had allowed the industry to double the processing power every 18 months until the last decade, where it is impossible to continually increase both frequency and doubled the transistor number in a chip because of the fundamental thermal limit in the ICs. The focus of the semiconductor industry in this era has changed to the third phase of scaling, the three dimensional (3D) power scaling where the focus has been changed from shrinking individual chips to emphasizing capability integration and power consumption reductions [4, 5] which aim for mobile, high connectivity and low power consumption devices. This scaling is in-line with the roadmap of IoT which aims for miniaturization, power-efficient electronics, and available spectrum in the year 2020 [6]. We concluded the performance and suitability of a SSD as a RF rectifier
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