Abstract
A novel self-powered solar-blind ZnGa2O4 ultraviolet (UV) photodetector has been constructed by fabricating asymmetric pairs of Au Schottky electrodes on the ZnGa2O4 film. The current-voltage curve of the device exhibits an obvious rectifying characteristic with a rectification ratio of 11.3 at ±8 V. At 0 V bias, the peak responsivity of our device at 246 nm is about 22.2 mA/W with an UV–vis rejection ratio of 1.3×104, indicating the excellent self-powered solar-blind UV photodetector performance. More interestingly, the rise time and decay time of the device are only 10 ns and 30 ns, respectively, which are much faster than that of any other previously reported self-powered solar-blind UV photodetectors to the best of our knowledge. The ultra-fast response speed of the device should be attributed to the asymmetric Schottky junctions and the high crystalline quality of our ZnGa2O4 film with low trap density. Our work provides a new method to constructing high-performance self-powered solar-blind UV photodetectors.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
