Abstract
Self-organizing process of moderately strained Zn1-xCdxSe layer on the GaAs(110) surface was investigated during the molecular beam epitaxy (MBE). The GaAs(110) surface was prepared by cleavage in ultrahigh vacuum (UHV). In contrast to the ZnSe layers which have a mirror-like surface, two types of surface structures were observed on the Zn1-xCdxSe layer, i.e. pyramidal-shaped islands and asymmetric Δ-shaped ridges oriented parallel to the [110] direction, indicating that the strain relaxation process was not of a conventional Stranski-Krastanow type. The ridges were strong correlated with the underlying dislocations produced by anisotropic in-plane strain relaxation. Local variation in the growth rate due to periodic strain distributions caused by the dislocations is suggested to be the formation mechanism of the ridge structures.
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