Abstract
This paper is devoted to the investigation of self-organized microrelief morphology control for GaAs and InP substrates by varying the chemical anisotropic etching regime. The microstructure and the morphology of self-organized microrelief of quasigrating type were revealed by atomic force microscopy (AFM) technique. This type of microrelief allows in particular to obtain additional photosensitivity enhancement for Schottky barrier structures due to surface plasmon polariton excitation. The optical and photoelectric characteristics of Au/GaAs (InP) barrier structures were investigated in the range of fundamental absorption of light and the optimum microrelief processing were selected.
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