Abstract
Methods of forming various In nanostructures on Si surfaces are demonstrated. Using a high-index Si(311) surface, isolated nanotriangles and wires were grown by optimizing the deposition rate and substrate temperature. In contrast, nanodots were formed by the deposition of In on a Si(111)–In-31×31 surface at room temperature (RT) deposition. On a Si(111)–In-4×1/31×31 coexisting surface, nanowires were selectively grown in the Si(111)–In 4×1 area by RT deposition through the nucleation promoted by the boundary barrier produced by the surrounding 31×31 area. Details were studied using scanning tunneling microscopy.
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