Self-organization at Semiconductor Surfaces. Atomic-Hydrogen-Induced Self-Organization Processes of Metal/Si Surface Phases.

Abstract

Recently, several works have been reported concerning the adsorption of atomic hydrogen (H) on metal (e. g. Ag)-induced Si(111)√3×√3 surface phases, in which the displacive adsorption of H causes the formation of metal clusters with nanometer size. These phenomena have disclosed an interesting process of self-organization from 2 D metal layer into 3 D clusters induced by adsorption of H. However, as for the interaction of H with other surface reconstructions besides √3×√3, only a few studies have been reported. Since the H-induced structural rearrangement of metal/Si surface phases is thought to be dependent on their original surface structures, it is possible for an appropriate surface phase to be self-organized into peculiar structures in a different manner than the above-mentioned 2 D-3 D transformation using the interaction of H. In this paper, we will show interesting behaviors of metal atoms and substrate Si atoms against H adsorption on metal/Si surfaces besides √3×√3, using the Si(100)2×1-Sb and the In/Si(111) surface phases as examples.