Abstract
A theoretical and experimental study was made of the self-modulation in Gunn diodes (i.e., the generation by these diodes of a 100% modulated microwave signal under certain conditions). The phenomenon is due to a sudden drop of the mean diode current, when the microwave generation voltage is reached, and to the excitation of oscillations, because of the sudden current drop, in the low-frequency oscillatory circuit. An ac voltage appears in the Gunn diode circuit and this voltage modulates the microwave signal. Relations are derived between the amplitude, shape, and frequency of self-modulation and the parameters of the diode in the circuit. The condition for the occurrence of self-modulation is \( {\text{2|R}}_{\text{e}} {\text{ |}}\left( {\text{L}} \right.{\text{/C)}}^{{\text{1/2}}} {\text{ > 1}} \) , where Re = RR l /(R + R l ); R is the differential resistance of the diode above the critical voltage; R l , L, and C are respectively the resistance, inductance, and capacitance of the parallel low-frequency circuit to which the diode is connected.
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