Abstract
ZnS epitaxial layers and ZnSe/CdSe superlattices (SLs) have been grown on GaAs substrates by a new growth method which we call self-regulating monolayer epitaxy (SME). SME is a self-regulating growth method, which is based on the fact that atoms physisorbed on top of an atomically flat surface are more loosely bound than atoms incorporated into a completed monolayer. We show that SME growth occurs in steps of an integer number of complete monolayers. The SLs grown with this method are of very good quality as revealed by high resolution X-ray diffraction (HRXD) and photoluminescence (PL) measurements.
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