Abstract

The rates of charging and discharging in lithium-ion batteries (LIBs) are critically controlled by the kinetics of Li insertion and extraction in solid-state electrodes. Silicon is being intensively studied as a high-capacity anode material for LIBs. However, the kinetics of Li reaction and diffusion in Si remain unclear. Here we report a combined experimental and theoretical study of the lithiation kinetics in individual Si nanowires. By using in situ transmission electron microscopy, we measure the rate of growth of a surface layer of amorphous Li(x)Si in crystalline Si nanowires during the first lithiation. The results show the self-limiting lithiation, which is attributed to the retardation effect of the lithiation-induced stress. Our work provides a direct measurement of the nanoscale growth kinetics in lithiated Si, and has implications on nanostructures for achieving the high capacity and high rate in the development of high performance LIBs.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.