Self-limiting growth of anatase TiO 2: A comparison of two deposition techniques

Abstract

Self-limiting deposition of titanium dioxide thin films was accomplished using pulsed plasma-enhanced chemical vapor deposition (PECVD) and plasma-enhanced atomic layer deposition (PEALD) at low temperatures ( T < 200 °C) using TiCl 4 and O 2. TiCl 4 is shown to be inert with molecular oxygen at process conditions, making it a suitable precursor for these processes. The deposition kinetics were examined as a function of TiCl 4 exposure and substrate temperature. The quality of the anatase films produced by the two techniques was nominally identical. The key distinctions are found in precursor utilization and conformality. Pulsed PECVD requires 20 times less TiCl 4, while PEALD must be used to uniformly coat complex topographies.