Abstract
Following an introductory overview of the intrinsic point defects in semiconductors the paper concentrates on Si and Ge, in particular on the exciting recent developments concerning Si self-interstitials. Proceedings from low to high temperatures the discussion covers the following subjects: the low-temperature mobility of point defects induced by particle irradiation or other techniques generating free charge carriers; the geometrical configurations, electric charge states, and thermally activated migration of self-interstitials and vacancies at intermediate temperatures; the predominance of vacancies in Ge and self-interstitials in Si under high-temperature equilibrium conditions. The remainder of the paper deals with the transition of the Si self-interstitials from dumbbell to spread-out configurations between intermediate and high temperatures and—so far as to bring out the relationship to self-interstitials in Si—with concentration-enhanced-diffusion phenomena and with the diffusion of Au in Si.
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