Abstract
AbstractIn this paper we propose structural models of self-interstitial clusters in silicon using the empirical potential method. Novel, fully co-ordinated compact clusters based on the hexagonal interstitial up to size four have been proposed. The energetics of their formation indicates that energy minimisation occurs due to elimination of dangling bonds. While the conventional dangling bond model yields an exponential decrease in the formation energy with size, we observe stable defects for sizes in multiples of four. The energy barrier required for a transition from compact model to the dangling bond chain model can possibly explain the experimentally observed energy barrier for sizes greater than eight.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
