Abstract
This paper focuses on electro-thermal behavior of short channel GaN HEMTs through numerical simulation and analytical modeling. An innovative two-heat-source approach is presented to numerically generate temperature profile in GaN HEMTs, which maintains both accuracy and computational efficiency. The concepts of maximum channel temperature and newly proposed equivalent channel temperature are visited to understand the impact of self-heating on device electrical behaviors and bridge the gap between electrical and thermal measurements The implications and guidelines to device design and compact modeling are also discussed.
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