Abstract
A physics-based kinetic Monte Carlo (KMC) method is developed to investigate the electromigration (EM) induced resistance evolution of interconnects. The microscopic physical mechanisms describing the transportation of metal ions and void formation are proposed and implemented in the simulator. The self-heating aware EM degradation of BEOL based on nanosheet MOSFETs in advanced technology node is predicted by the experiment-calibrated KMC simulator. The results show that self-heating of device induced thermal crosstalk can aggravate the EM degradation in multi-level interconnects with the confined metal pitch and increased power density.
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