Abstract
Self-heating has already been proven to be one of the key sources to memory effects in RF power amplifiers (PAs). However, mechanisms behind the generation of memory effects, as caused by self-heating have not been well documented. On basis of transistor physical properties this paper proposes a simple electro-thermal model and shows how self-heating can generate different types of memory effects, such as bandwidth dependent intermodulation components and hysteresis loops. In addition, it is shown that self-heating can result in generation of new spectral components even in an otherwise linear PA. A time domain modeling framework is implemented to investigate memory effects generated by self-heating and simulation results are shown to agree with theoretical analysis.
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