Abstract
In this paper, we present a newly developed finite-element-based three-dimensional electrothermal Monte Carlo simulator, suitable for the study of a wide variety of nanodevices including nanowire-based structures. By relying on phonon statistics, electrothermal effects are accounted for through the coupling of an ensemble Monte Carlo trajectory simulation with the solution of the heat diffusion equation. The simulation model, which is suitably calibrated with experimental data, is employed to investigate carrier transport, and heat generation and transfer in metal-insulator field-effect transistors (MISFETs) based on a single InAs nanowire channel.
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