Abstract

A theoretical study on the influence of intense terahertz (THz) electromagnetic (EM) radiations on electronic structure is presented for a modulation-doped two-dimensional (2D) semiconductor system. We find that in the presence of a THz EM radiation field polarised linearly along the 2D plane of a 2D electron gas (2DEG), the electron density of states will be modified strongly by the radiation field. As a consequence, the Fermi-energy and the electron density in the sample system will be affected markedly by the EM radiations. The results obtained have indicated that the photon-modified electronic subband structure in a 2DEG device can be observed by using the recently developed free-electron laser sources.

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