Abstract
AbstractThe factors limiting the conductivity of fluorine‐doped tin dioxide (FTO) produced via atmospheric pressure chemical vapor deposition are investigated. Modeling of the transport properties indicates that the measured Hall effect mobilities are far below the theoretical ionized impurity scattering limit. Significant compensation of donors by acceptors is present with a compensation ratio of 0.5, indicating that for every two donors there is approximately one acceptor. Hybrid density functional theory calculations of defect and impurity formation energies indicate the most probable acceptor‐type defects. The fluorine interstitial defect has the lowest formation energy in the degenerate regime of FTO. Fluorine interstitials act as singly charged acceptors at the high Fermi levels corresponding to degenerately n‐type films. X‐ray photoemission spectroscopy of the fluorine impurities is consistent with the presence of substitutional FO donors and interstitial Fi in a roughly 2:1 ratio in agreement with the compensation ratio indicated by the transport modeling. Quantitative analysis through Hall effect, X‐ray photoemission spectroscopy, and calibrated secondary ion mass spectrometry further supports the presence of compensating fluorine‐related defects.
Highlights
Transparency and electrical conductivity.[1,2,3] This unique characteristic has produced via atmospheric pressure chemical vapor deposition are investiled to the incorporation of Transparent conducting oxides (TCOs) into a gated
X-ray photoemission spectroscopy of the fluorine impurities is consistent with the fluorine-doped tin dioxide (FTO), a material that displays competitive optoelectronic properties to one of the industry leaders, tin-doped indium oxide, but offers higher chemical, mechanical and thermal presence of substitutional FO donors and interstitial Fi in a roughly 2:1 ratio in agreement with the compensation ratio indicated by the transport modeling
We demonstrate that FTO possesses intrinsic limitations on its mobility and carrier density due to this self-compensation
Summary
Transparency and electrical conductivity.[1,2,3] This unique characteristic has produced via atmospheric pressure chemical vapor deposition are investiled to the incorporation of TCOs into a gated. Significant compensation of donors by acceptors is present with a compensation ratio of 0.5, indicating that for every two donors there is approximately number of modern technologies including low-emissivity windows, solar cells, touch screens, and flat panel displays.[4,5,6,7] Currently, a very limited number of TCO materials dominate the consumer market. An example of this is the market for impurity formation energies indicate the most probable acceptor-type defects. Transparent conducting oxides (TCOs) are materials that commonly deposited via atmospheric pressure chemical vapor combine the usually mutually exclusive properties of optical deposition (APCVD) in an online coating process where the
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