Abstract
The growth of self-catalyzed ternary core-shell GaAsP nanowire (NW) arrays on SiO2 patterned Si(111) substrates has been demonstrated by using solid-source molecular beam epitaxy. A high-temperature deoxidization step up to ∼ 900 °C prior to NW growth was used to remove the native oxide and/or SiO2 residue from the patterned holes. To initiate the growth of GaAsP NW arrays, the Ga predeposition used for assisting the formation of Ga droplets in the patterned holes, was shown to be another essential step. The effects of the patterned-hole size on the NW morphology were also studied and explained using a simple growth model. A lattice-matched radial GaAsP core-shell NW structure has subsequently been developed with room-temperature photoluminescence emission around 740 nm. These results open up new perspectives for integrating position-controlled III-V NW photonic and electronic structures on a Si platform.
Highlights
The integration of III−V materials on a Si platform has been pursued for more than 40 years.[1,2] By integrating the direct band gap III−V materials that have high absorption coefficients, high carrier mobilities, and large solar spectrum coverage onto the mature and cost-effective Si platform, it would create novel optoelectronic devices for Si photonics.[3−9]
One-dimensional semiconductor III−V nanowires (NWs) have gained significant attention for integrating III−V materials and devices on a Si platform because of their unique structural, optical, and electronic properties.[12−15] The strain formed between III−V NWs and Si substrates can be effectively relieved in an elastic way due to their small interfacial area.[16−19] The III−V materials could be monolithically grown on Si substrates in the form of NWs
The novel device architectures with high performance have been predicted for III−V NWs monolithically grown on a Si platform.[15,20−24] For example, it has been predicted that a two-junction tandem solar cell (SC), consisting of a 1.7 eV NW junction and a 1.1 eV Si junction, has a theoretical efficiency of 33.8% at 1 sun AM1.5G and 42.3% under 500 suns AM1.5D concentration.[25]
Summary
The integration of III−V materials on a Si platform has been pursued for more than 40 years.[1,2] By integrating the direct band gap III−V materials that have high absorption coefficients, high carrier mobilities, and large solar spectrum coverage onto the mature and cost-effective Si platform, it would create novel optoelectronic devices for Si photonics.[3−9]. A similar phenomenon has been reported previously.[44,45,47] These results suggest that the patterned holes in Figure 1a,c,e might be partly covered by the native oxide and/or SiO2 residue prior to NW growth.
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