Abstract
Ensembles of CdSe∕ZnSe quantum dots (QDs), with different self-assembled patterns, have been realized by depositing amorphous Te (a-Te) onto an epitaxial CdSe layer and subsequently desorbing it. During temperature ramp up for desorption, Te forms an epitaxially oriented polycrystalline layer along the grain boundaries of which, desorption initiates. Consequently, the underlying CdSe layer is first exposed in narrow trenches, within which QDs nucleate preferentially. The morphology of the polycrystalline Te layer, which strongly depends on the a-Te cap layer thickness, governs the spatial pattern of the QDs. By a variant technique, wherein a noncrystallizing amorphous layer is intentionally patterned before desorption, QDs might be positioned on predefined sites.
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