SELF-ASSEMBLY OF BISMUTH OXIDE NANOSTRUCTURE USING THE MOD METHOD

Abstract

ABSTRACT δ-Bi2O3 has attracted extensive attention in recent years for its high ionic conductivity especially at high temperatures. The bismuth sesquioxide can serve as the potential top electrodes of the Bi-containing ferroelectric thin films. In order to investigate the property of self-patterning Bi2O3, the self-assembled bismuth oxide was fabricated on Pt/Ti/SiO2/Si substrates and the Bi3.25La0.75Ti3O12 thin films. The method we used here was spin coating the Bi-containing precursors on the substrates and then annealing in the oxygen atmosphere to get the self-patterning Bi2O3 particles. To avoid the affection of the substrate to the largest extent, the substrates were annealed first for different time in oxygen atmosphere in order to select appropriate conditions. Scanning probe microscope (SPM), scanning electron microscope (SEM) and the x-ray diffraction (XRD) were used to detect the morphology and the structure of the particles mentioned above. It showed that the change from separated particles to continuous thin films occurred at the precursor's concentration of 0.008 mol/l.